I. GaAs Material Properties
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چکیده
منابع مشابه
Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice
Since the concept of doping superlattice was proposed by Esak and Tsu, the electronic properties of it were intensively investigated both theoretically and experimentally. Doping superlattices are structures which contain alternatively n-type and p-type doped regions of one semiconductor material and have a number of unique properties, such as tunable electronic structures, indirect band gap in...
متن کاملFirst principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes
Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...
متن کاملFirst principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes
Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...
متن کاملRaman spectroscopy of self-catalyzed GaAs(1-x)Sb(x) nanowires grown on silicon.
Thanks to their wide band structure tunability, GaAs(1-x)Sb(x) nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman scattering provides information on the vibrational properties of materials, which can be related...
متن کاملEffects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells
We have studied the effects of AlGaAs energy barriers surrounding self-assembled InAs quantum dots in a GaAs matrix on the properties of solar cells made with multiple quantum dot layers in the active region of a photodiode. We have compared the fenced dot samples with conventional InAs/ GaAs quantum dot solar cells and with GaAs reference cells. We have found that, contrary to theoretical pred...
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